Unveiling conducting pathways embedded in strongly disordered graphene

Wei Yuan Yang, Bi Yi Wu, Cheng Jung Shih, Shun Tsung Lo, Hsin Yen Lee, T. M. Chen, Y. H. Chang, Y. F. Chen, Chi Te Liang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Graphene shows very different electrical properties under the influence of electrical environments. For example, pristine graphene can show either insulating or normally metallic behavior when supported by different substrates. Here we study charge transport in disordered graphene grown by chemical vapor deposition with varying channel widths. We demonstrate that at high temperatures homogeneous hopping governs the electrical characteristics, whereas at low enough temperatures where charge hopping is frozen out carriers through the embedded weakly disordered conducting pathways contribute a finite conductance instead of being strongly insulating. Our work not only reveals their inhomogeneous features but also provides a new approach for characterizing the surface disorder in large-area graphene systems.

原文English
文章編號115001
期刊Semiconductor Science and Technology
31
發行號11
DOIs
出版狀態Published - 2016 9月 27

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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