Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes

Shui Jinn Wang, Kai Ming Uang, Shiue Lung Chen, Yu Cheng Yang, Shu Cheng Chang, Tron Min Chen, Chao Hsuing Chen, Bor Wen Liou

研究成果: Article

106 引文 斯高帕斯(Scopus)

摘要

The fabrication process and performance characteristics of a vertical-structured GaN-based light-emitting diode (VM-LED) employing nickel electroplating and patterned laser liftoff techniques are presented. As compared to regular LED, the forward voltage drop of the VM-LED at 20-80 mA is about 10%-21% lower, while the light output power (Lop) is more than twice in magnitude. Especially, the Lop exhibits no saturation or degradation at an injection current up to 520 mA which is about 4.3 times higher than that of the regular one. Substantial improvements in the VM-LEDs performances are mainly attributed to the use of metallic substrate which results in less current crowding, larger effective area, and higher thermal conductivity.

原文English
文章編號011111
期刊Applied Physics Letters
87
發行號1
DOIs
出版狀態Published - 2005 七月 4

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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