The fabrication process and performance characteristics of a vertical-structured GaN-based light-emitting diode (VM-LED) employing nickel electroplating and patterned laser liftoff techniques are presented. As compared to regular LED, the forward voltage drop of the VM-LED at 20-80 mA is about 10%-21% lower, while the light output power (Lop) is more than twice in magnitude. Especially, the Lop exhibits no saturation or degradation at an injection current up to 520 mA which is about 4.3 times higher than that of the regular one. Substantial improvements in the VM-LEDs performances are mainly attributed to the use of metallic substrate which results in less current crowding, larger effective area, and higher thermal conductivity.
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