Use of the thermal chemical vapor deposition to fabricate light-emitting diodes based on ZnO nanowire/p-GaN heterojunction

Sheng Po Chang, Ting Hao Chang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there exist the yellow band in the hetrojunction. It would be attributed to the deep defect level in the heterojunction.

原文English
文章編號903176
期刊Journal of Nanomaterials
2011
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

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