Using co-sputtered ZrSiOx gate dielectrics to improve mobility and subthreshold swing of amorphous IGZO thin-film transistors

Chien Hsiung Hung, Shui Jinn Wang, Pang Yi Liu, Chien Hung Wu, Nai Sheng Wu, Hao Ping Yan, Tseng Hsing Lin

研究成果: Conference contribution

摘要

In recent years, amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs) with much better performance compared with the low-temperature polysilicon (LTPS) counterpart have been demonstrated [1-2], nevertheless, continuous efforts are still urged to further polish its electrical properties for display application. To strengthen field effect and reduce gate leakage current, many research works have been focused on the feasibility of other alternative high-κ dielectric for α-IGZO TFTs [3]. In the present work, the use of co-sputtered zirconium silicon oxide (ZrSiOx) gate dielectrics to improve both mobility and subthreshold swing (SS) of α-IGZO TFT is proposed and demonstrated. The ZrSiOx dielectric is expected to have a good compromise between the field effect (κ-value) and gate leakage current, because silicon dioxide (SiO2) is with the widest bandgap and zirconium dioxide (ZrO2) could have a much better interface with α-IGZO in comparison with hafnium dioxide (HfO2) [4]. The suitable RF power ratio for the co-sputtering of ZrO2 and SiO2 targets at room temperature to maximize the role of ZrSiOx dielectrics is investigated. Immunity of poly-structure formation of the ZrSiOx dielectrics with RF power ratio (ZrO2:SiO2) > 2 found in experiments is examined. In addition, effect of post annealing after dielectric deposition (PA) on device performance are also studied.

原文English
主出版物標題74th Annual Device Research Conference, DRC 2016
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509028276
DOIs
出版狀態Published - 2016 八月 22
事件74th Annual Device Research Conference, DRC 2016 - Newark, United States
持續時間: 2016 六月 192016 六月 22

出版系列

名字Device Research Conference - Conference Digest, DRC
2016-August
ISSN(列印)1548-3770

Other

Other74th Annual Device Research Conference, DRC 2016
國家United States
城市Newark
期間16-06-1916-06-22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • 引用此

    Hung, C. H., Wang, S. J., Liu, P. Y., Wu, C. H., Wu, N. S., Yan, H. P., & Lin, T. H. (2016). Using co-sputtered ZrSiOx gate dielectrics to improve mobility and subthreshold swing of amorphous IGZO thin-film transistors. 於 74th Annual Device Research Conference, DRC 2016 [7548433] (Device Research Conference - Conference Digest, DRC; 卷 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2016.7548433