UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors

Y. K. Su, J. K. Sheu

研究成果: Conference contribution

摘要

Recent achievements in GaN-based light-emitting diodes (LEDs), which is linked to the use of new designs, such as p+-AlGaN/GaN strained-layer superlattice (SLS) and n+-InGaN/GaN short-period superlattice (SPS) top contact layer is reported. GaN-based LEDs with low-operation voltages, which are as low as 3 V (at 20 mA ) even lower, can be achieved by the use of these heavy-doped layers. In addition, conventional transparent conductive oxide, such as indium tin oxide (ITO), can be served as a transparent top contact layer in GaN-based LEDs other than thin metal film such as Ni/Au. Luminescence intensity in visible GaN-based LEDs can be significantly improved by this new design due to the high-transparency top contact layer. In the recent achievements, white LEDs including a variety of designs, such as phosphor-containing and phosphor-less device structures, will also be reported. Specifically, the high-efficiency yellow-green (λ∼565 nm) LEDs based on InGaN/GaN MQW emitting layers, which the luminescence intensity is comparable with the conventional AlGaInP yellow-green (λ∼575 nm) LEDs is achieved. This high-efficiency InGaN/GaN yellow-green LED makes a single-chip complementary white LED possible.

原文English
主出版物標題Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
編輯K. T. Chan, H. S. Kwok
發行者Institute of Electrical and Electronics Engineers Inc.
頁面3-6
頁數4
ISBN(電子)0780378873, 9780780378872
DOIs
出版狀態Published - 2003 一月 1
事件6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
持續時間: 2003 九月 122003 九月 14

出版系列

名字Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

Other

Other6th Chinese Optoelectronics Symposium, COES 2003
國家/地區China
城市Hong Kong
期間03-09-1203-09-14

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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