UV enhanced emission performance of low temperature grown Ga-doped ZnO nanorods

Shoou Jinn Chang, Bi Gui Duan, Chih Hung Hsiao, Chung Wei Liu, Sheng Joue Young

研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)

摘要

We report on hydrothermal growth and gallium doping of ZnO (GZO) nanorods for field emitters. The GZO nanorods grown at 90 °C were structurally uniform and well oriented with pure wurtzite structure. It was also found that turn-on fields were 5.4 and 3.6 V/μm while field-enhancement factors β were 1711 and 9058, for the ZnO nanorods and GZO nanorods grown at 90 °C, respectively. In addition, the turn-on electrical field was reduced from 3.6 to 3.15 V/μm and β of GZO nanorods was enhanced from 9058 to 13529 by UV illumination.

原文English
文章編號6657695
頁(從 - 到)66-69
頁數4
期刊IEEE Photonics Technology Letters
26
發行號1
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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