UV enhanced emission performance of low temperature grown Ga-doped ZnO nanorods

Shoou Jinn Chang; Bi Gui Duan; Chih Hung Hsiao; Chung Wei Liu; Sheng Joue Young

doi:10.1109/LPT.2013.2289322

UV enhanced emission performance of low temperature grown Ga-doped ZnO nanorods

Shoou Jinn Chang, Bi Gui Duan, Chih Hung Hsiao, Chung Wei Liu, Sheng Joue Young

微電子工程研究所

研究成果: Article › 同行評審

27 引文斯高帕斯（Scopus）

摘要

We report on hydrothermal growth and gallium doping of ZnO (GZO) nanorods for field emitters. The GZO nanorods grown at 90 °C were structurally uniform and well oriented with pure wurtzite structure. It was also found that turn-on fields were 5.4 and 3.6 V/μm while field-enhancement factors β were 1711 and 9058, for the ZnO nanorods and GZO nanorods grown at 90 °C, respectively. In addition, the turn-on electrical field was reduced from 3.6 to 3.15 V/μm and β of GZO nanorods was enhanced from 9058 to 13529 by UV illumination.

原文	English
文章編號	6657695
頁（從 - 到）	66-69
頁數	4
期刊	IEEE Photonics Technology Letters
卷	26
發行號	1
DOIs	https://doi.org/10.1109/LPT.2013.2289322
出版狀態	Published - 2014 1月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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10.1109/LPT.2013.2289322

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UV enhanced emission performance of low temperature grown Ga-doped ZnO nanorods

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