TY - JOUR
T1 - UV enhanced field emission for β-Ga2O3 nanowires
AU - Wu, Y. L.
AU - Chang, Shoou Jinn
AU - Liu, C. H.
AU - Weng, Wen Yin
AU - Tsai, Tsung Ying
AU - Hsu, Cheng Liang
PY - 2013
Y1 - 2013
N2 - This letter presents vapor-liquid-solid growth of β-Ga 2O3 nanowires (NWs) on cost-effective SiO2Si template and the fabrication of β-Ga2O3 NW field emitters. It is found that the β-Ga2O3 NWs grown at 950°C are structurally uniform, defect free, and well-oriented with pure monoclinic structure. It is also found that turnon fields are 2.0, 3.9, and 5.8 Vμ m whereas field-enhancement factors β are 1890, 2760, and 4489, for the samples grown at 850° C, 900° C, and 950°C, respectively. For the sample prepared at 950° C, it is found that we could further reduce the turnon field from 2 to 1.2 Vμ m whereas enhance the field-enhancement factor β from 4489 to 6926 by ultraviolet irradiation.
AB - This letter presents vapor-liquid-solid growth of β-Ga 2O3 nanowires (NWs) on cost-effective SiO2Si template and the fabrication of β-Ga2O3 NW field emitters. It is found that the β-Ga2O3 NWs grown at 950°C are structurally uniform, defect free, and well-oriented with pure monoclinic structure. It is also found that turnon fields are 2.0, 3.9, and 5.8 Vμ m whereas field-enhancement factors β are 1890, 2760, and 4489, for the samples grown at 850° C, 900° C, and 950°C, respectively. For the sample prepared at 950° C, it is found that we could further reduce the turnon field from 2 to 1.2 Vμ m whereas enhance the field-enhancement factor β from 4489 to 6926 by ultraviolet irradiation.
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U2 - 10.1109/LED.2013.2254105
DO - 10.1109/LED.2013.2254105
M3 - Article
AN - SCOPUS:84876977331
SN - 0741-3106
VL - 34
SP - 701
EP - 703
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 5
M1 - 6502192
ER -