UV enhanced field emission for β-Ga2O3 nanowires

Y. L. Wu, Shoou Jinn Chang, C. H. Liu, Wen Yin Weng, Tsung Ying Tsai, Cheng Liang Hsu

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This letter presents vapor-liquid-solid growth of β-Ga 2O3 nanowires (NWs) on cost-effective SiO2Si template and the fabrication of β-Ga2O3 NW field emitters. It is found that the β-Ga2O3 NWs grown at 950°C are structurally uniform, defect free, and well-oriented with pure monoclinic structure. It is also found that turnon fields are 2.0, 3.9, and 5.8 Vμ m whereas field-enhancement factors β are 1890, 2760, and 4489, for the samples grown at 850° C, 900° C, and 950°C, respectively. For the sample prepared at 950° C, it is found that we could further reduce the turnon field from 2 to 1.2 Vμ m whereas enhance the field-enhancement factor β from 4489 to 6926 by ultraviolet irradiation.

原文English
文章編號6502192
頁(從 - 到)701-703
頁數3
期刊IEEE Electron Device Letters
34
發行號5
DOIs
出版狀態Published - 2013 五月 7

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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