UV enhanced field emission properties of Ga-doped ZnO nanosheets

Yi Hsing Liu; Sheng Joue Young; Liang Wen Ji; Shoou Jinn Chang

doi:10.1109/TED.2015.2416730

UV enhanced field emission properties of Ga-doped ZnO nanosheets

Yi Hsing Liu, Sheng Joue Young, Liang Wen Ji, Shoou Jinn Chang

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were ∼ 25 nm and 2.16 μ m , respectively. In the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 Vμ m , and the field enhancement factor (β) was 4037. Under UV illumination, the turn-ON field and field enhancement factor were 2.83 Vμ m and 6616, respectively.

原文	English
文章編號	7086027
頁（從 - 到）	2033-2037
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	62
發行號	6
DOIs	https://doi.org/10.1109/TED.2015.2416730
出版狀態	Published - 2015 6月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/TED.2015.2416730

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title = "UV enhanced field emission properties of Ga-doped ZnO nanosheets",

abstract = "High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were ∼ 25 nm and 2.16 μ m , respectively. In the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 Vμ m , and the field enhancement factor (β) was 4037. Under UV illumination, the turn-ON field and field enhancement factor were 2.83 Vμ m and 6616, respectively.",

author = "Liu, {Yi Hsing} and Young, {Sheng Joue} and Ji, {Liang Wen} and Chang, {Shoou Jinn}",

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AU - Liu, Yi Hsing

AU - Young, Sheng Joue

AU - Ji, Liang Wen

AU - Chang, Shoou Jinn

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Y1 - 2015/6/1

N2 - High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were ∼ 25 nm and 2.16 μ m , respectively. In the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 Vμ m , and the field enhancement factor (β) was 4037. Under UV illumination, the turn-ON field and field enhancement factor were 2.83 Vμ m and 6616, respectively.

AB - High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were ∼ 25 nm and 2.16 μ m , respectively. In the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 Vμ m , and the field enhancement factor (β) was 4037. Under UV illumination, the turn-ON field and field enhancement factor were 2.83 Vμ m and 6616, respectively.

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JF - IEEE Transactions on Electron Devices

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UV enhanced field emission properties of Ga-doped ZnO nanosheets

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