摘要
In this paper, vertical ZnO nanosheets are synthesized on Si substrate using a simple solution-based method at room temperature to realize a field emission device. The thin nanosheets that were perpendicular to the Si substrate surface were mutually interwoven into net and formed a continuous nanosheet film, with a unique surface morphology and a high surface-to-volume ratio. The improvement in the FE properties under UV illumination is attributed to the generation of a large number of excited electrons and the edge effect, and demonstrates that the presented route is a simple route for realizing field emission devices. This method has low cost and effectively improves the FE properties of the devices.
原文 | English |
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文章編號 | 7123649 |
頁(從 - 到) | 776-781 |
頁數 | 6 |
期刊 | IEEE Transactions on Nanotechnology |
卷 | 14 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 2015 7月 |
All Science Journal Classification (ASJC) codes
- 電腦科學應用
- 電氣與電子工程