TY - JOUR
T1 - Uv enhanced indium-doped ZnO nanorod field emitter
AU - Chang, Shoou Jinn
AU - Duan, Bi Gui
AU - Liu, Chung Wei
AU - Hsiao, Chih Hung
AU - Young, Sheng Joue
AU - Huang, Chien Sheng
PY - 2013
Y1 - 2013
N2 - In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V m um. The field enhancement factors, β, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.
AB - In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V m um. The field enhancement factors, β, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.
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U2 - 10.1109/TED.2013.2280910
DO - 10.1109/TED.2013.2280910
M3 - Article
AN - SCOPUS:84887318737
SN - 0018-9383
VL - 60
SP - 3901
EP - 3906
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 11
M1 - 6619440
ER -