UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors

Bo Yuan Su, An Hsiu Cheng, Jia Ling Wu, Chun Cheng Lin, Jian Fu Tang, Sheng Yuan Chu, Yung Der Juang

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm2 · V-1 · s-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm2 · V-1 · s-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.

原文English
文章編號6891100
頁(從 - 到)6-12
頁數7
期刊IEEE/OSA Journal of Display Technology
11
發行號1
DOIs
出版狀態Published - 2015 一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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