UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors

Bo Yuan Su, An Hsiu Cheng, Jia Ling Wu, Chun Cheng Lin, Jian Fu Tang, Sheng-Yuan Chu, Yung Der Juang

研究成果: Article

11 引文 斯高帕斯(Scopus)


The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm2 · V-1 · s-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm2 · V-1 · s-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.

頁(從 - 到)6-12
期刊IEEE/OSA Journal of Display Technology
出版狀態Published - 2015 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

指紋 深入研究「UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors」主題。共同形成了獨特的指紋。

  • 引用此