UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors

Bo Yuan Su; An Hsiu Cheng; Jia Ling Wu; Chun Cheng Lin; Jian Fu Tang; Sheng Yuan Chu; Yung Der Juang

doi:10.1109/JDT.2014.2354364

UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors

Bo Yuan Su, An Hsiu Cheng, Jia Ling Wu, Chun Cheng Lin, Jian Fu Tang, Sheng Yuan Chu, Yung Der Juang

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm² · V^-1 · s^-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm² · V^-1 · s^-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.

原文	English
文章編號	6891100
頁（從 - 到）	6-12
頁數	7
期刊	IEEE/OSA Journal of Display Technology
卷	11
發行號	1
DOIs	https://doi.org/10.1109/JDT.2014.2354364
出版狀態	Published - 2015 1月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程

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10.1109/JDT.2014.2354364

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title = "UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors",

abstract = "The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm2 · V-1 · s-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm2 · V-1 · s-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.",

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AU - Wu, Jia Ling

AU - Lin, Chun Cheng

AU - Tang, Jian Fu

AU - Chu, Sheng Yuan

AU - Juang, Yung Der

PY - 2015/1/1

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AB - The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm2 · V-1 · s-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm2 · V-1 · s-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.

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UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors

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