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UV-ozone-treated ultra-thin Al2O3-Doped ZnO film as anode buffer layer on organic light emitting diodes

研究成果: Conference contribution

摘要

In this paper, the UV-ozone treated 2 wt% Al2O3-doped ZnO layers for 1 nm as anode buffer layer were prepared by thermal evaporation. The current density enhanced from 235 to 355 mA/cm2, luminance enhanced from 7588 to 13470 cd/m2, and efficiency enhanced from 3.2 to 3.8 cd/A.

原文English
主出版物標題23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
發行者Society for Information Display
頁面1259-1260
頁數2
ISBN(電子)9781510845510
出版狀態Published - 2016 1月 1
事件23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
持續時間: 2016 12月 72016 12月 9

出版系列

名字23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
2

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
國家/地區Japan
城市Fukuoka
期間16-12-0716-12-09

All Science Journal Classification (ASJC) codes

  • 硬體和架構
  • 人機介面
  • 電子、光磁材料
  • 電氣與電子工程

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