Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons

M. Poljak, K. L. Wang, T. Suligoj

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

We report the results of multi-scale modeling of ultra-narrow graphene nanoribbons (GNRs) that combines atomistic non-equilibrium Green's function (NEGF) approach with semiclassical mobility modeling. The variability of the transport gap and carrier mobility caused by random edge defects is analyzed. We find that the variability increases as the GNR width is downscaled and that even the minimum variation of the total mobility reaches more than 100% compared to average mobility in edge-defected nanoribbons. It is shown that scattering by optical phonons exhibits significantly more variability than the acoustic, line-edge roughness and Coulomb scattering mechanisms. The simulation results demonstrate that sub-5 nm-wide nanoribbons offer no improvement over conventional bulk semiconductors, however, GNRs are comparable with sub-7 nm-thick silicon-on-insulator devices in terms of mobility-bandgap trade-off characteristics.

原文English
頁(從 - 到)67-74
頁數8
期刊Solid-State Electronics
108
DOIs
出版狀態Published - 2015 六月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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