Variation-aware comparative study of 10-nm GAA versus FinFET 6-T SRAM performance and yield

Peng Zheng, Yi Bo Liao, Nattapol Damrongplasit, Meng Hsueh Chiang, Tsu Jae King Liu

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

This paper benchmarks the performance of gate-all-around (GAA) MOSFETs against that of optimized silicon-on-insulator FinFETs at 10-nm gate length. Variability in transistor performance due to systematic and random variations is estimated with the aid of TCAD 3-D device simulations, for both device structures. The yield of six-transistor SRAM cells implemented with these advanced MOSFET structures is then investigated via a calibrated physically based compact model. The GAA MOSFET technology is projected to provide for 0.1 V lower minimum cell operating voltage with reduced cell area.

原文English
文章編號6951350
頁(從 - 到)3949-3954
頁數6
期刊IEEE Transactions on Electron Devices
61
發行號12
DOIs
出版狀態Published - 2014 十二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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