Variation of the mobility and the two-dimensional electron gas concentration with indium composition in δ-doped GaAs/In x Ga 1-x As/GaAs pseudomorphic structures

Wei-Chou Hsu, C. M. Chen, W. Lin

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

The electron mobility and the two-dimensional electron gas (2DEG) concentration in different indium compositions (0.1<x<0.6) δ-doped GaAs/In x Ga 1-x As/GaAs pseudomorphic structures grown by low-pressure metalorganic chemical vapor deposition are studied. The electron mobilities of a δ-doped GaAs layer are comparable to those of previous reports. Furthermore, the maximum mobility (5500 and 33 000 cm 2 /V s at 300 and 77 K, respectively) of the proposed pseudomorphic structure appears at x=0.37. Taking into account of strain and quantum effects, the variation trends of calculated 2DEG concentrations are in good agreement with the experimental results.

原文English
頁(從 - 到)4332-4335
頁數4
期刊Journal of Applied Physics
70
發行號8
DOIs
出版狀態Published - 1991 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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