Vertical cavity surface emitting laser diodes

K. Tai, L. Yang, R. Fischer, T. Tanbun-Ek, R. A. Logan, Y. H. Wang, M. Hong, A. Y. Cho

研究成果: Conference contribution

摘要

Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAs/AlGaAs and MOVPE-grown InGaAsP/InP material systems with emission wavelengths near 0.87 and 1.3 μm, respectively. The GaAs/AlGaAs VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with maximum output power greater than 1 mW. The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that improvements on the cavity design should yield room temperature lasing operation. Single longitudinal mode emission and circular near- and far-field patterns were observed for the two VCSEL structures.

原文English
主出版物標題Proceedings of SPIE - The International Society for Optical Engineering
發行者Publ by Int Soc for Optical Engineering
頁面139-144
頁數6
ISBN(列印)0819402575, 9780819402578
DOIs
出版狀態Published - 1990
事件Nonlinear Optical Materials and Devices for Photonic Switching - Los Angeles, CA, USA
持續時間: 1990 一月 161990 一月 17

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
1216
ISSN(列印)0277-786X

Other

OtherNonlinear Optical Materials and Devices for Photonic Switching
城市Los Angeles, CA, USA
期間90-01-1690-01-17

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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