Vertical GaN-Based LEDs with Naturally Textured Surface Formed by Patterned Sapphire Substrate with Self-Assembled Ag Nanodots as Etching Mask

Yu Hsiang Yeh, Jinn Kong Sheu, Ming Lun Lee, Wei Yu Yen, Li Chi Peng, Chun Yi Yeh, Po Hsun Liao, Po Cheng Chen, Wei Chih Lai

研究成果: Article

6 引文 (Scopus)

摘要

We propose a new pattern-transfer method comprising laser liftoff and wafer bonding process; the former was used to separate GaN-based epitaxial layers from patterned sapphire substrates (PSSs) with self-assembled surface nanodots, and the latter was used to combine the epitaxial layers with the Si substrate. The nanodots on the PSS surface were formed by dry etching with self-assembled Ag nanoislands as an etching mask. The fabricated vertical GaN-based light-emitting diodes (VLEDs) presented an in situ nanotextured surface. At a driving current of 350 mA, the VLEDs increased the output power by ∼ 17 % compared with the conventional VLEDs without a nanotextured surface. The main enhancement can be attributed to the increase in light-extraction efficiency of photons emitted inside the LEDs.

原文English
文章編號7202874
頁(從 - 到)2919-2923
頁數5
期刊IEEE Transactions on Electron Devices
62
發行號9
DOIs
出版狀態Published - 2015 九月 1

指紋

Aluminum Oxide
Sapphire
Light emitting diodes
Masks
Etching
Epitaxial layers
Substrates
Wafer bonding
Dry etching
Photons
Lasers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Yeh, Yu Hsiang ; Sheu, Jinn Kong ; Lee, Ming Lun ; Yen, Wei Yu ; Peng, Li Chi ; Yeh, Chun Yi ; Liao, Po Hsun ; Chen, Po Cheng ; Lai, Wei Chih. / Vertical GaN-Based LEDs with Naturally Textured Surface Formed by Patterned Sapphire Substrate with Self-Assembled Ag Nanodots as Etching Mask. 於: IEEE Transactions on Electron Devices. 2015 ; 卷 62, 編號 9. 頁 2919-2923.
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Vertical GaN-Based LEDs with Naturally Textured Surface Formed by Patterned Sapphire Substrate with Self-Assembled Ag Nanodots as Etching Mask. / Yeh, Yu Hsiang; Sheu, Jinn Kong; Lee, Ming Lun; Yen, Wei Yu; Peng, Li Chi; Yeh, Chun Yi; Liao, Po Hsun; Chen, Po Cheng; Lai, Wei Chih.

於: IEEE Transactions on Electron Devices, 卷 62, 編號 9, 7202874, 01.09.2015, p. 2919-2923.

研究成果: Article

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AU - Sheu, Jinn Kong

AU - Lee, Ming Lun

AU - Yen, Wei Yu

AU - Peng, Li Chi

AU - Yeh, Chun Yi

AU - Liao, Po Hsun

AU - Chen, Po Cheng

AU - Lai, Wei Chih

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