Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns

Jinn Kong Sheu, Fu Bang Chen, Shou Hung Wu, Ming Lun Lee, Po Cheng Chen, Yu Hsiang Yeh

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a metal reflector sandwiched between the GaN-based epitaxial layers and the Si substrate could increase the effective thickness of the absorption layer. Given that the thermally resistive sapphire substrates were replaced by the Si substrate with high thermal conductivity, the solar cells did not show degradation in power conversion efficiency (PCE) even when the solar concentrations were increased to 300 suns. The open circuit voltage increased from 1.90 V to 2.15 V and the fill factor increased from 0.55 to 0.58 when the concentrations were increased from 1 sun to 300 suns. With the 300-sun illumination, the PCE was enhanced by approximately 33% compared with the 1-sun illumination.

原文English
頁(從 - 到)A1222-A1228
期刊Optics Express
22
發行號SUPPL. 5
DOIs
出版狀態Published - 2014 八月 25

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學

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