Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns

Jinn Kong Sheu, Fu Bang Chen, Shou Hung Wu, Ming Lun Lee, Po Cheng Chen, Yu Hsiang Yeh

研究成果: Article

16 引文 (Scopus)

摘要

InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a metal reflector sandwiched between the GaN-based epitaxial layers and the Si substrate could increase the effective thickness of the absorption layer. Given that the thermally resistive sapphire substrates were replaced by the Si substrate with high thermal conductivity, the solar cells did not show degradation in power conversion efficiency (PCE) even when the solar concentrations were increased to 300 suns. The open circuit voltage increased from 1.90 V to 2.15 V and the fill factor increased from 0.55 to 0.58 when the concentrations were increased from 1 sun to 300 suns. With the 300-sun illumination, the PCE was enhanced by approximately 33% compared with the 1-sun illumination.

原文English
頁(從 - 到)A1222-A1228
期刊Optics Express
22
發行號SUPPL. 5
DOIs
出版狀態Published - 2014 八月 25

指紋

solar cells
sun
illumination
open circuit voltage
reflectors
sapphire
thermal conductivity
wafers
degradation
conduction
silicon
metals

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此文

Sheu, Jinn Kong ; Chen, Fu Bang ; Wu, Shou Hung ; Lee, Ming Lun ; Chen, Po Cheng ; Yeh, Yu Hsiang. / Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns. 於: Optics Express. 2014 ; 卷 22, 編號 SUPPL. 5. 頁 A1222-A1228.
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abstract = "InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a metal reflector sandwiched between the GaN-based epitaxial layers and the Si substrate could increase the effective thickness of the absorption layer. Given that the thermally resistive sapphire substrates were replaced by the Si substrate with high thermal conductivity, the solar cells did not show degradation in power conversion efficiency (PCE) even when the solar concentrations were increased to 300 suns. The open circuit voltage increased from 1.90 V to 2.15 V and the fill factor increased from 0.55 to 0.58 when the concentrations were increased from 1 sun to 300 suns. With the 300-sun illumination, the PCE was enhanced by approximately 33{\%} compared with the 1-sun illumination.",
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Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns. / Sheu, Jinn Kong; Chen, Fu Bang; Wu, Shou Hung; Lee, Ming Lun; Chen, Po Cheng; Yeh, Yu Hsiang.

於: Optics Express, 卷 22, 編號 SUPPL. 5, 25.08.2014, p. A1222-A1228.

研究成果: Article

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AU - Yeh, Yu Hsiang

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AB - InGaN/GaN-based solar cells with vertical-conduction feature on silicon substrates were fabricated by wafer bonding technique. The vertical solar cells with a metal reflector sandwiched between the GaN-based epitaxial layers and the Si substrate could increase the effective thickness of the absorption layer. Given that the thermally resistive sapphire substrates were replaced by the Si substrate with high thermal conductivity, the solar cells did not show degradation in power conversion efficiency (PCE) even when the solar concentrations were increased to 300 suns. The open circuit voltage increased from 1.90 V to 2.15 V and the fill factor increased from 0.55 to 0.58 when the concentrations were increased from 1 sun to 300 suns. With the 300-sun illumination, the PCE was enhanced by approximately 33% compared with the 1-sun illumination.

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