Vertical InGaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using Ag paste as bonding layer. Vertical LEDs with Ag paste bonding layer were bonded with Si substrate at a low temperature of 140°C. In addition to the low-temperature bonding process, the soft property of Ag paste could better alleviate thermal stress compared with conventional eutectic metal bonding layer such as Au-Sn. Under the same test conditions, these two LEDs showed similar optical and electrical properties and reliability. However, LEDs with Ag-paste bonding layer were fabricated through a low-temperature bonding process. The characteristic of soft solder enables a relatively wider process window, such as bonding pressure and temperature, and a higher yield as compared with the vertical LEDs with Au-Sn eutectic bonding layer.
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