Vertical InGaN light-emitting diodes with Ag paste as bonding layer

Y. C. Yang, Jinn Kong Sheu, Ming Lun Lee, Che Kang Hsu, Shang Ju Tu, Shu Yen Liu, C. C. Yang, Feng Wen Huang

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)


Vertical InGaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using Ag paste as bonding layer. Vertical LEDs with Ag paste bonding layer were bonded with Si substrate at a low temperature of 140°C. In addition to the low-temperature bonding process, the soft property of Ag paste could better alleviate thermal stress compared with conventional eutectic metal bonding layer such as Au-Sn. Under the same test conditions, these two LEDs showed similar optical and electrical properties and reliability. However, LEDs with Ag-paste bonding layer were fabricated through a low-temperature bonding process. The characteristic of soft solder enables a relatively wider process window, such as bonding pressure and temperature, and a higher yield as compared with the vertical LEDs with Au-Sn eutectic bonding layer.

頁(從 - 到)949-951
期刊Microelectronics Reliability
出版狀態Published - 2012 5月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 安全、風險、可靠性和品質
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程


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