Very-high temperature (200°C) and high-speed operation of cascade GaN-based green light- Emitting diodes with an InGaN insertion layer

Jin Wei Shi, H. W. Huang, F. M. Kuo, J. K. Sheu, W. C. Lai, M. L. Lee

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

We demonstrate a novel type of linear cascade green light-emitting diode (LED) arrays as a light source for in-car or harsh environment plastic optical fiber (POF) communications. To further enhance its dynamic and static performance, an InGaN layer is inserted between an n-type GaN cladding layer and InGaNGaN multiple quantum wells as an efficient current spreading layer. Compared with the control device without that layer, our three-LED cascade array demonstrates a smaller turn-on voltage (9.3 versus 11 V at 20 mA) and a larger output power (25.5 versus 22.5 mW at 180 mA), corresponding to an enhancement of around 31% in wall-plug efficiency. Furthermore, under the constant voltage bias of an in-car battery (12 V), our three-LED array exhibits an electrical-to-optical 3-dB bandwidth (100 versus 40 MHz) performance superior to that of the control device. Even under high-temperature dynamic operation, we observe that the InGaN insertion layer gives strong enhancement of modulation speed with negligible degradation of the output power, unlike the red resonant-cavity LEDs conventionally used for POF. We achieve 200-Mb/s error-free transmission at 200 °C which is the highest operation temperature among all the reported high-speed LEDs.

原文English
文章編號5460921
頁(從 - 到)1033-1035
頁數3
期刊IEEE Photonics Technology Letters
22
發行號14
DOIs
出版狀態Published - 2010

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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