Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures

H. M. Shieh, W. C. Hsu, C. L. Wu

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.

原文English
頁(從 - 到)509-511
頁數3
期刊Applied Physics Letters
63
發行號4
DOIs
出版狀態Published - 1993

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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