# Very large magnetoresistance in graphene nanoribbons

Jingwei Bai, Rui Cheng, Faxian Xiu, Lei Liao, Minsheng Wang, Alexandros Shailos, Kang L. Wang, Yu Huang, Xiangfeng Duan

233 引文 斯高帕斯（Scopus）

## 摘要

Graphene has unique electronic properties1,2, and graphene nanoribbons are of particular interest because they exhibit a conduction bandgap that arises due to size confinement and edge effects3-11. Theoretical studies have suggested that graphene nanoribbons could have interesting magneto-electronic properties, with a very large predicted magnetoresistance4,12-20. Here, we report the experimental observation of a significant enhancement in the conductance of a graphene nanoribbon field-effect transistor by a perpendicular magnetic field. A negative magnetoresistance of nearly 100% was observed at low temperatures, with over 50% magnetoresistance remaining at room temperature. This magnetoresistance can be tuned by varying the gate or sourcedrain bias. We also find that the charge transport in the nanoribbons is not significantly modified by an in-plane magnetic field. The large observed values of magnetoresistance may be attributed to the reduction of quantum confinement through the formation of cyclotron orbits and the delocalization effect under the perpendicular magnetic field 15-20.

原文 English 655-659 5 Nature Nanotechnology 5 9 https://doi.org/10.1038/nnano.2010.154 Published - 2010 九月

• 生物工程
• 原子與分子物理與光學
• 生物醫學工程
• 材料科學(全部)
• 凝聚態物理學
• 電氣與電子工程