We present the observation of an effective real-space transfer process of hot electrons resulting in a very strong negative differential resistance in GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing symmetrically double δ-doping layers on both sides of the InGaAs channel. By Hall measurements, the proposed structure shows carrier mobility as high as 4500 (14 100) cm2/V s at 300 (77) K which is suitable for high-frequency operations. Meanwhile, this structure with a 5×100 μm2 emitter channel reveals extremely sharp charge injection, broad current valley range (>3 V), high transconductance (over 23.5 S/mm), high current driving capability, and high peak-to-valley current ratio (up to 156 000). We also carried out secondary-ion mass spectrometry profiles to confirm the quality of the proposed structure.
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