Visible-blind GaN p-i-n photodiodes with an Al_0.12Ga_0.88N/GaN superlattice structure

Keyphrases

• Dark Current 100%
• PIN Photodiode 100%
• Photocurrent 100%
• Visible-blind 100%
• Superlattice Structure 100%
• Full Width at Half Maximum 100%
• Transient Response 100%
• Response Time 50%
• Responsivity 50%
• UV Photodiode 50%
• AlGaN-GaN 50%
• Contrast Ratio 50%
• Mg Doping 50%
• Zero Bias 50%
• Strained Layer Superlattice 50%
• Depletion Layer 50%
• Constant Dark 50%

Engineering

• Photodiode 100%
• Photocurrent 100%
• Transient Analysis 100%
• Superlattice Structure 100%
• Response Time 50%
• Responsivity 50%
• Contrast Ratio 50%
• Strained Layer 50%
• Layer Superlattice 50%
• Depletion Layer 50%