This study reports a hybrid visible-blind ultraviolet (UV) photodetectors (PDs) with a poly-(N-vinylcarbazole) (PVK) intermediate layer between the NiO thin film and ZnO nanorods (NRs). The insertion of a PVK buffer layer between the NiO thin film and ZnO NRs is able to effectively reduce leakage path and lower the recombination of photo-excited carriers at the interface. The best photo-responsivity of the n-ZnO/PVK/p-NiO PD was found to be as high as 57.31 AAV at a-3 V bias under UV illumination at 380 run, which corresponded to an external quantum efficiency of 1.87×104 %. The light-to-dark current ratios of the PD with and without the PVK intermediate layer at a reverse bias of 3 V are 3.32×102 and 12, respectively. The ZnO/PVK/NiO PD also exhibited UV-selective photo-response with an UV-to-visible rejection ratio (R380nm/R450nm) of more than 102. The proposed PD with a PVK intermediate layer has the potential for developing low-cost and high-performance UV PDs in sensing applications.