Visible luminescence properties of (Ga1-xZnx)(N 1-xOx) solid solution (x 0.22)

Yueh Chien Lee, Tai Yuan Lin, Chih Wen Wu, Hsisheng Teng, Che Chia Hu, Sheng Yao Hu, Min De Yang

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Temperature-dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) are measured for the (Ga1-xZn x)(N1-xOx) solid solution with x = 0.22 to study its luminescence properties. PL result shows that the material exhibits visible luminescence at around 1.87 eV (663 nm) with a broad emission band even at room temperature. The origin of luminescence mechanism can be attributed to the radiative recombination of the electrons bound to donors and the holes bound to acceptors. The investigation from the integrated PL intensity and TRPL as a function of temperature indicates that the activation energy for thermalizing the electrons bound to a donor dominates the luminescence behavior in the (Ga1-xZnx)(N1-xOx) solid solution.

原文English
文章編號073506
期刊Journal of Applied Physics
109
發行號7
DOIs
出版狀態Published - 2011 四月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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