Voltage-tunable uvc–uvb dual-band metal–semiconductor–metal photodetector based on ga2o3/mgzno heterostructure by rf sputtering

Jie Si Jheng, Chun Kai Wang, Yu Zung Chiou, Sheng Po Chang, Shoou Jinn Chang

研究成果: Article同行評審

摘要

Dual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga2O3/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different bias voltages. A PD with the annealing temperature of Ga2O3 at 600C can improve the crystal quality of Ga2O3 thin film and exhibit the least persistent photoconductivity (PPC) effect. However, a PD with the annealing temperature of Ga2O3 at 600C cannot achieve a voltage-tunable dual-band characteristic. On the contrary, the PD without annealing can suppress the carriers from the bottom layer of MgZnO thin film at a lower bias voltage of 1 V. At this time, the peak responsivity at 250 nm was mainly dominated by the top layer of Ga2O3 thin film. Then, as the bias voltage increased to 5 V, the peak detection wavelength shifted from 250 (UVC) to 320 nm (UVB). In addition, the PD with a 25 nm–thick SiO2 layer inserted between Ga2O3 and MgZnO thin film can achieve a broader operating bias voltage range for dual-band applications.

原文English
文章編號994
頁(從 - 到)1-10
頁數10
期刊Coatings
10
發行號10
DOIs
出版狀態Published - 2020 十月

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

指紋 深入研究「Voltage-tunable uvc–uvb dual-band metal–semiconductor–metal photodetector based on ga<sub>2</sub>o<sub>3</sub>/mgzno heterostructure by rf sputtering」主題。共同形成了獨特的指紋。

引用此