Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor

Jinn Kong Sheu, Fu Bang Chen, Yen Chin Wang, Chih Chiang Chang, Shih Hsien Huang, Chun Nan Liu, Ming Lun Lee

研究成果: Article

16 引文 斯高帕斯(Scopus)

摘要

We present a trichromatic GaN-based light-emitting diode (LED) that emits near-ultraviolet (n-UV) blue and green peaks combined with red phosphor to generate white light with a low correlated color temperature (CCT) and high color rendering index (CRI). The LED structure, blue and green unipolar InGaN/GaN multiple quantum wells (MQWs) stacked with a top p-i-n structure containing an InGaN/GaN MQW emitting n-UV light, was grown epitaxially on a single substrate. The trichromatic LED chips feature a vertical conduction structure on a silicon substrate fabricated through wafer bonding and laser lift-off techniques. The blue and green InGaN/GaN MQWs were pumped with n-UV light to re-emit low-energy photons when the LEDs were electrically driven with a forward current. The emission spectrum included three peaks at approximately 405, 468, and 537 nm. Furthermore, the trichromatic LED chips were combined with red phosphor to generate white light with a CCT and CRI of approximately 2900 and 92, respectively.

原文English
頁(從 - 到)A232-A239
期刊Optics Express
23
發行號7
DOIs
出版狀態Published - 2015 四月 6

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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