## 摘要

We have investigated the weak antilocalization (WAL) effect in the p-Type Bi_{2}Se_{2.1}Te_{0.9} topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi_{2}Se_{2.1}Te_{0.9} crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

原文 | English |
---|---|

文章編號 | 145901 |

期刊 | Journal of Applied Physics |

卷 | 122 |

發行號 | 14 |

DOIs | |

出版狀態 | Published - 2017 10月 14 |

## All Science Journal Classification (ASJC) codes

- 物理與天文學 (全部)

## 指紋

深入研究「Weak antilocalization effect due to topological surface states in Bi_{2}Se

_{2.1}Te

_{0.9}」主題。共同形成了獨特的指紋。