Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

K. Shrestha, D. Graf, V. Marinova, B. Lorenz, C. W. Chu

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We have investigated the weak antilocalization (WAL) effect in the p-Type Bi2Se2.1Te0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi2Se2.1Te0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

原文English
文章編號145901
期刊Journal of Applied Physics
122
發行號14
DOIs
出版狀態Published - 2017 十月 14

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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