Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode

Yan Kuin Su, Cheng Hsien Wu, Jia Rong Chang, Kuo Ming Wu, Hsin Chuan Wang, Wen Bin Chen, Shin Jie You, Shoou Jinn Chang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The novel Al0.66In0.34As0.85Sb0.15/In0.53 Ga0.47As heterostructure has a large conduction band offset (about 1 eV). Taking the advantage of high conduction-band offset, it has been demonstrated to be a potential candidate for double-barrier resonant tunneling diodes (DBRTDs). Well width is an important parameter for the performance of a DBRTD. We fixed the barrier width and discussed the well width dependence for Al0.66In0.34As0.85Sb0.15/In0.53 Ga0.47As DBRTD. Peak current densities exhibit a maximum at the 4 nm well width. A peak-to-valley current ratio of 46 with a peak current density of 22 kA/cm2 at room temperature was demonstrated for the 4 nm-InGaAs-well.

原文English
頁(從 - 到)1109-1111
頁數3
期刊Solid-State Electronics
46
發行號8
DOIs
出版狀態Published - 2002 八月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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