Wet deposition process for thin-film transistors

S. C. Shen, C. T. Pan, S. J. Chang, S. C. Lin

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

A wet thin-film process was applied for manufacturing thin-film transistors (TFTs) to improve the traditional dry deposition process which is time consuming and expensive. In this study, wet processes, such as the electroless deposition of silver (Ag) and the electrophoretic deposition (EPD) of Al 2O3, were used to replace the dry process. Because of low resistivity, Ag was used as the conductive layer. This study demonstrates how the formation of Al2O3 ceramic thin film was deposited on Ag film by using the EPD process on a glass TFT substrate. The electrical and mechanical properties of the Ag film were examined according to the deposition time and sintering temperature. Nano-Al2O3 powders were prepared to form an insulation layer on the Ag film by using EPD. Stabilized electrophoretic suspensions at various pH values were prepared. Deposition times from 1 to 7 min were applied to obtain the various deposition conditions. EDP was followed by Ag deposition and Al2O3 sintering. A four-point probe and nanoindenter were used to examine the electrical resistivity and mechanical properties, respectively.

原文English
頁(從 - 到)498-503
頁數6
期刊Materials and Manufacturing Processes
29
發行號4
DOIs
出版狀態Published - 2014 四月 3

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 材料力學
  • 機械工業
  • 工業與製造工程

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