Wet oxidation of GeSi strained layers by rapid thermal processing

D. K. Nayak, K. Kamjoo, J. S. Park, J. C.S. Woo, K. L. Wang

研究成果: Article同行評審

114 引文 斯高帕斯(Scopus)

摘要

A cold-wall rapid thermal processor is used for the wet oxidation of the commensurately grown GexSi1-x layers on Si substrates. The rate of oxidation of the GexSi1-x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the increase in the Ge content in GexSi1-x layer. The oxidation rate of GexSi1-x appears to decrease with increasing oxidation time for the time-temperature cycles considered here. Employing high-frequency and quasi-static capacitance-voltage measurements, it is found that a fixed negative oxide charge density in the range of 10 11- 1012/cm2 and the interface trap level density (in the mid-gap region) of about 1012/cm2 eV are present. Further, the density of this fixed interface charge at the SiO 2/GeSi interface is found to increase with the Ge concentration in the commensurately grown GeSi layers.

原文English
頁(從 - 到)369-371
頁數3
期刊Applied Physics Letters
57
發行號4
DOIs
出版狀態Published - 1990

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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