摘要
Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.
| 原文 | English |
|---|---|
| 頁（從 - 到） | A401-A412 |
| 期刊 | Optics Express |
| 卷 | 23 |
| 發行號 | 7 |
| DOIs | |
| 出版狀態 | Published - 2015 四月 6 |
指紋
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
引用此文
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White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids. / Lee, Ming Lun; Yeh, Yu Hsiang; Tu, Shang Ju; Chen, P. C.; Lai, Wei-Chi; Sheu, Jinn-Kong.
於: Optics Express, 卷 23, 編號 7, 06.04.2015, p. A401-A412.研究成果: Article
TY - JOUR
T1 - White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids
AU - Lee, Ming Lun
AU - Yeh, Yu Hsiang
AU - Tu, Shang Ju
AU - Chen, P. C.
AU - Lai, Wei-Chi
AU - Sheu, Jinn-Kong
PY - 2015/4/6
Y1 - 2015/4/6
N2 - Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.
AB - Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.
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U2 - 10.1364/OE.23.00A401
DO - 10.1364/OE.23.00A401
M3 - Article
AN - SCOPUS:84928007763
VL - 23
SP - A401-A412
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 7
ER -