White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids

Ming Lun Lee, Yu Hsiang Yeh, Shang Ju Tu, P. C. Chen, Wei-Chi Lai, Jinn-Kong Sheu

研究成果: Article

9 引文 (Scopus)

摘要

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

原文English
頁(從 - 到)A401-A412
期刊Optics Express
23
發行號7
DOIs
出版狀態Published - 2015 四月 6

指紋

pyramids
light emitting diodes
templates
quantum wells
indium
transmission electron microscopy
wavelengths

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此文

Lee, Ming Lun ; Yeh, Yu Hsiang ; Tu, Shang Ju ; Chen, P. C. ; Lai, Wei-Chi ; Sheu, Jinn-Kong. / White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids. 於: Optics Express. 2015 ; 卷 23, 編號 7. 頁 A401-A412.
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abstract = "Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.",
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White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids. / Lee, Ming Lun; Yeh, Yu Hsiang; Tu, Shang Ju; Chen, P. C.; Lai, Wei-Chi; Sheu, Jinn-Kong.

於: Optics Express, 卷 23, 編號 7, 06.04.2015, p. A401-A412.

研究成果: Article

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AU - Lee, Ming Lun

AU - Yeh, Yu Hsiang

AU - Tu, Shang Ju

AU - Chen, P. C.

AU - Lai, Wei-Chi

AU - Sheu, Jinn-Kong

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AB - Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

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