摘要
Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.
原文 | English |
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頁(從 - 到) | A401-A412 |
期刊 | Optics Express |
卷 | 23 |
發行號 | 7 |
DOIs | |
出版狀態 | Published - 2015 4月 6 |
All Science Journal Classification (ASJC) codes
- 原子與分子物理與光學