White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids

Ming Lun Lee, Yu Hsiang Yeh, Shang Ju Tu, P. C. Chen, Wei Chih Lai, Jinn Kong Sheu

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

原文English
頁(從 - 到)A401-A412
期刊Optics Express
23
發行號7
DOIs
出版狀態Published - 2015 四月 6

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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