Wide linear sensing sensors using ZnO:Ta extended-gate field-effect- transistors

Ying Shuo Chiu, Ching Ting Lee, Li Ren Lou, Shu Ching Ho, Chun Te Chuang

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

To obtain wide linear pH sensing range, the tantalum doped zinc oxide (ZnO:Ta) thin film was deposited as the sensing membrane of extended-gate field-effect-transistor (EGFET) pH sensors using the vapor cooling condensation system. Compared with the ZnO EGFET pH sensors, the experimental results exhibited that the linear sensing pH range of the ZnO:Ta EGFET pH sensors was extended from the pH range of 4-12 to the pH range of 1.3-12. Furthermore, the ZnO:Ta pH sensors was stable in the whole extended pH range and showed favorable sensing sensitivity of 41.56 mV/pH. The AFM images of the ZnO:Ta sensing membrane after the measurement in strong acidic solution showed no observable surface damage, which further verified the high corrosion resistance of the ZnO:Ta sensing membrane.

原文English
頁(從 - 到)944-948
頁數5
期刊Sensors and Actuators, B: Chemical
188
DOIs
出版狀態Published - 2013 九月 4

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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