Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy

J. L. Liu, S. J. Cai, G. L. Jin, K. L. Wang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with cross-sectional dimensions between 50 nm and 2 μm grow mainly with a growth axis parallel to the <111> direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source gas concentration on the growth rate we conclude that this independence is a fundamental one even when gas pressure ranges as high as 1 × 10-4 Torr. This method provides a possible alternative means for fabricating ultrafine silicon quantum wires.

原文English
頁(從 - 到)188-190
頁數3
期刊Electrochemical and Solid-State Letters
1
發行號4
DOIs
出版狀態Published - 1998 10月

All Science Journal Classification (ASJC) codes

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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