Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

Cécile Grezes, Hochul Lee, Albert Lee, Shaodi Wang, Farbod Ebrahimi, Xiang Li, Kin Wong, Jordan A. Katine, Berthold Ocker, Jürgen Langer, Puneet Gupta, Pedram Khalili Amiri, Kang L. Wang

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24 引文 斯高帕斯(Scopus)

摘要

We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.

原文English
文章編號7748496
期刊IEEE Magnetics Letters
8
DOIs
出版狀態Published - 2017

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料

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