X-ray photoelectron and X-ray absorption spectroscopic study on β-FeSi 2 thin films fabricated by ion beam sputter deposition

F. Esaka, H. Yamamoto, N. Matsubayashi, Y. Yamada, M. Sasase, K. Yamaguchi, S. Shamoto, M. Magara, T. Kimura

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

A combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is applied to clarify surface chemical states of β-FeSi 2 films fabricated by an ion-beam sputtering deposition method. The differences in the chemical states of the films fabricated at substrate temperatures of 873, 973 and 1173 K are investigated. For the film fabricated at 873 K, Si 2p XPS spectra indicate the formation of a relatively thicker SiO 2 layer. In addition, Fe L-edge XAS spectra exhibit the formation of FeSi 2-X by preferential oxidation of Si or the presence of unreacted Fe. The results for the film fabricated at 1173 K imply the existence of FeSi 2 with α and ε phases. In contrast, the results for the film fabricated at 973 K indicate the formation of relatively homogeneous β-FeSi 2 . These imply that the relatively excellent crystal property of the film fabricated at 973 K is due to the formation of homogeneous β-FeSi 2 . As a conclusion, the combination of XPS and XAS using synchrotron radiation is a powerful tool to elucidate the surface chemical states of thin films.

原文English
頁(從 - 到)3155-3159
頁數5
期刊Applied Surface Science
256
發行號10
DOIs
出版狀態Published - 2010 3月 1

All Science Journal Classification (ASJC) codes

  • 一般化學
  • 凝聚態物理學
  • 一般物理與天文學
  • 表面和介面
  • 表面、塗料和薄膜

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