X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high- k dielectric prepared by sol-gel spin coating method

Kuo Hsing Kao; Shiow Huey Chuang; Woei Cherng Wu; Tien Sheng Chao; Jian Hao Chen; Ming Wen Ma; Reui Hong Gao; Michael Y. Chiang

doi:10.1063/1.2978231

X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high- k dielectric prepared by sol-gel spin coating method

Kuo Hsing Kao, Shiow Huey Chuang, Woei Cherng Wu, Tien Sheng Chao, Jian Hao Chen, Ming Wen Ma, Reui Hong Gao, Michael Y. Chiang

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The characteristics of CoTiO3 high- k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k∼40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work.

原文	English
文章編號	092907
期刊	Applied Physics Letters
卷	93
發行號	9
DOIs	https://doi.org/10.1063/1.2978231
出版狀態	Published - 2008

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.2978231

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title = "X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high- k dielectric prepared by sol-gel spin coating method",

abstract = "The characteristics of CoTiO3 high- k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k∼40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work.",

author = "Kao, {Kuo Hsing} and Chuang, {Shiow Huey} and Wu, {Woei Cherng} and Chao, {Tien Sheng} and Chen, {Jian Hao} and Ma, {Ming Wen} and Gao, {Reui Hong} and Chiang, {Michael Y.}",

note = "Funding Information: The authors would like to thank National Science Council, Republic of China, through Grant No. NSC-96-2221-E-009-198. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

doi = "10.1063/1.2978231",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "9",

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T1 - X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high- k dielectric prepared by sol-gel spin coating method

AU - Kao, Kuo Hsing

AU - Chuang, Shiow Huey

AU - Wu, Woei Cherng

AU - Chao, Tien Sheng

AU - Chen, Jian Hao

AU - Ma, Ming Wen

AU - Gao, Reui Hong

AU - Chiang, Michael Y.

N1 - Funding Information: The authors would like to thank National Science Council, Republic of China, through Grant No. NSC-96-2221-E-009-198. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008

Y1 - 2008

N2 - The characteristics of CoTiO3 high- k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k∼40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work.

AB - The characteristics of CoTiO3 high- k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k∼40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work.

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DO - 10.1063/1.2978231

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high- k dielectric prepared by sol-gel spin coating method

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