TY - JOUR
T1 - Zinc oxide nanowire based field emitters
AU - Ramanathan, Sivakumar
AU - Chen, Yu Chun
AU - Tzeng, Yonhua
PY - 2010/11
Y1 - 2010/11
N2 - We report the field emission properties of 50 nm diameter ZnO nanowires that were electrochemically self-assembled within pores of an anodic alumina film. Current versus voltage measurements of the FowlerNordheim tunneling current indicate that the turn-on field is 15 V μm-1 and the field enhancement factor β calculated for two sets of samples turned out to be 670 and 1481, respectively (theoretical value for β in bulk ZnO is 205). The enhancement in β is most likely due to the large aspect ratio of the nanowires. Variation in the length of the nanowires causes the screening effect, which increases the turn-on field and reduces the emission current density. The currentvoltage characteristics of the wires are non-linear and show a rectifying behavior.
AB - We report the field emission properties of 50 nm diameter ZnO nanowires that were electrochemically self-assembled within pores of an anodic alumina film. Current versus voltage measurements of the FowlerNordheim tunneling current indicate that the turn-on field is 15 V μm-1 and the field enhancement factor β calculated for two sets of samples turned out to be 670 and 1481, respectively (theoretical value for β in bulk ZnO is 205). The enhancement in β is most likely due to the large aspect ratio of the nanowires. Variation in the length of the nanowires causes the screening effect, which increases the turn-on field and reduces the emission current density. The currentvoltage characteristics of the wires are non-linear and show a rectifying behavior.
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U2 - 10.1016/j.physe.2010.07.072
DO - 10.1016/j.physe.2010.07.072
M3 - Article
AN - SCOPUS:78649972046
SN - 1386-9477
VL - 43
SP - 285
EP - 288
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1
ER -