Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

Huang Chung Cheng, Po Yu Yang, Jyh Liang Wang, Sanjay Agarwal, Wei Chih Tsai, Shui Jinn Wang, I. Che Lee

研究成果: Article

19 引文 斯高帕斯(Scopus)

摘要

High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 °C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm2/V ċ s, low threshold voltage of 2.25 V, high on/off-current ratio above 106, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.

原文English
文章編號5713228
頁(從 - 到)497-499
頁數3
期刊IEEE Electron Device Letters
32
發行號4
DOIs
出版狀態Published - 2011 四月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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