ZnCdSe nanowires grown by molecular beam epitaxy

B. W. Lan; C. H. Hsiao; S. C. Hung; S. J. Chang; S. J. Young; Y. C. Cheng; S. H. Chih; B. R. Huang

doi:10.1116/1.3431087

ZnCdSe nanowires grown by molecular beam epitaxy

B. W. Lan
, C. H. Hsiao
, S. C. Hung
, S. J. Chang
, S. J. Young
, Y. C. Cheng
, S. H. Chih
, B. R. Huang

微電子工程研究所

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The authors report the growth of high density ternary Zn_1-x Cd_x Se (x=0.1,0.3) nanowires on an oxidized Si(100) substrate by molecular beam epitaxy and the fabrication of ZnCdSe nanowire photodetectors. It was found that the as-grown ZnCdSe nanowires exhibited mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that the average diameters for the Zn_0.9 Cd_0.1 Se and Zn _0.7 Cd_0.3 Se nanowires were 36.0 and 70.6 nm, respectively, while the average lengths of Zn_0.9 Cd_0.1 Se and Zn_0.7 Cd_0.3 Se nanowires were both around 1 μm. Furthermore, it was found that the turn-on and turn-off time constants of the fabricated photodetectors were both less than 3 s.

原文	English
頁（從 - 到）	613-616
頁數	4
期刊	Journal of Vacuum Science and Technology B
卷	28
發行號	3
DOIs	https://doi.org/10.1116/1.3431087
出版狀態	Published - 2010 5月

All Science Journal Classification (ASJC) codes

電子、光磁材料
儀器
製程化學與技術
表面、塗料和薄膜
電氣與電子工程
材料化學

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10.1116/1.3431087

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title = "ZnCdSe nanowires grown by molecular beam epitaxy",

abstract = "The authors report the growth of high density ternary Zn1-x Cdx Se (x=0.1,0.3) nanowires on an oxidized Si(100) substrate by molecular beam epitaxy and the fabrication of ZnCdSe nanowire photodetectors. It was found that the as-grown ZnCdSe nanowires exhibited mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that the average diameters for the Zn0.9 Cd0.1 Se and Zn 0.7 Cd0.3 Se nanowires were 36.0 and 70.6 nm, respectively, while the average lengths of Zn0.9 Cd0.1 Se and Zn0.7 Cd0.3 Se nanowires were both around 1 μm. Furthermore, it was found that the turn-on and turn-off time constants of the fabricated photodetectors were both less than 3 s.",

author = "Lan, \{B. W.\} and Hsiao, \{C. H.\} and Hung, \{S. C.\} and Chang, \{S. J.\} and Young, \{S. J.\} and Cheng, \{Y. C.\} and Chih, \{S. H.\} and Huang, \{B. R.\}",

note = "Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University under projects from the Ministry of Education, Taiwan. This work was also in part supported by the Ministry of Economic Affairs (MOEA) and NSC Grant No. 98-EC-17-A-09020769. The authors would also like to thank the National Taiwan University of Science and Technology for the assistance in TEM measurements. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding related measurements.",

year = "2010",

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doi = "10.1116/1.3431087",

language = "English",

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pages = "613--616",

journal = "Journal of Vacuum Science and Technology B",

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T1 - ZnCdSe nanowires grown by molecular beam epitaxy

AU - Lan, B. W.

AU - Hsiao, C. H.

AU - Hung, S. C.

AU - Chang, S. J.

AU - Young, S. J.

AU - Cheng, Y. C.

AU - Chih, S. H.

AU - Huang, B. R.

N1 - Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University under projects from the Ministry of Education, Taiwan. This work was also in part supported by the Ministry of Economic Affairs (MOEA) and NSC Grant No. 98-EC-17-A-09020769. The authors would also like to thank the National Taiwan University of Science and Technology for the assistance in TEM measurements. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding related measurements.

PY - 2010/5

Y1 - 2010/5

N2 - The authors report the growth of high density ternary Zn1-x Cdx Se (x=0.1,0.3) nanowires on an oxidized Si(100) substrate by molecular beam epitaxy and the fabrication of ZnCdSe nanowire photodetectors. It was found that the as-grown ZnCdSe nanowires exhibited mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that the average diameters for the Zn0.9 Cd0.1 Se and Zn 0.7 Cd0.3 Se nanowires were 36.0 and 70.6 nm, respectively, while the average lengths of Zn0.9 Cd0.1 Se and Zn0.7 Cd0.3 Se nanowires were both around 1 μm. Furthermore, it was found that the turn-on and turn-off time constants of the fabricated photodetectors were both less than 3 s.

AB - The authors report the growth of high density ternary Zn1-x Cdx Se (x=0.1,0.3) nanowires on an oxidized Si(100) substrate by molecular beam epitaxy and the fabrication of ZnCdSe nanowire photodetectors. It was found that the as-grown ZnCdSe nanowires exhibited mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that the average diameters for the Zn0.9 Cd0.1 Se and Zn 0.7 Cd0.3 Se nanowires were 36.0 and 70.6 nm, respectively, while the average lengths of Zn0.9 Cd0.1 Se and Zn0.7 Cd0.3 Se nanowires were both around 1 μm. Furthermore, it was found that the turn-on and turn-off time constants of the fabricated photodetectors were both less than 3 s.

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JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

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ZnCdSe nanowires grown by molecular beam epitaxy

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