ZnO-based MIS photodetectors (DOI:10.1016/j.sna.2007.06.006)

S. J. Young; L. W. Ji; S. J. Chang; S. H. Liang; K. T. Lam; T. H. Fang; K. J. Chen; X. L. Du; Q. K. Xue

doi:10.1016/j.sna.2007.06.003

ZnO-based MIS photodetectors (DOI:10.1016/j.sna.2007.06.006)

S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, T. H. Fang, K. J. Chen, X. L. Du, Q. K. Xue

研究成果: Comment/debate › 同行評審

59 引文斯高帕斯（Scopus）

摘要

We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 10² and 3.2 × 10⁴, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that UV to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 10² and 3.8 × 10³, respectively.

原文	English
頁（從 - 到）	225-229
頁數	5
期刊	Sensors and Actuators, A: Physical
卷	141
發行號	1
DOIs	https://doi.org/10.1016/j.sna.2007.06.003
出版狀態	Published - 2008 1月 15

All Science Journal Classification (ASJC) codes

電子、光磁材料
儀器
凝聚態物理學
表面、塗料和薄膜
金屬和合金
電氣與電子工程

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@article{002292ed0698456ab40829da0d666310,

title = "ZnO-based MIS photodetectors (DOI:10.1016/j.sna.2007.06.006)",

abstract = "We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that UV to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.",

author = "Young, {S. J.} and Ji, {L. W.} and Chang, {S. J.} and Liang, {S. H.} and Lam, {K. T.} and Fang, {T. H.} and Chen, {K. J.} and Du, {X. L.} and Xue, {Q. K.}",

note = "Funding Information: This work was supported by National Science Council under contract number NSC-94-2215-E-150-009. The MBE growth of ZnO films was performed at Institute of Physics, Chinese Academy of Sciences, and financially supported by NSFC, MST and CAS. ",

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doi = "10.1016/j.sna.2007.06.003",

language = "English",

volume = "141",

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TY - JOUR

T1 - ZnO-based MIS photodetectors (DOI:10.1016/j.sna.2007.06.006)

AU - Young, S. J.

AU - Ji, L. W.

AU - Chang, S. J.

AU - Liang, S. H.

AU - Lam, K. T.

AU - Fang, T. H.

AU - Chen, K. J.

AU - Du, X. L.

AU - Xue, Q. K.

N1 - Funding Information: This work was supported by National Science Council under contract number NSC-94-2215-E-150-009. The MBE growth of ZnO films was performed at Institute of Physics, Chinese Academy of Sciences, and financially supported by NSFC, MST and CAS.

PY - 2008/1/15

Y1 - 2008/1/15

N2 - We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that UV to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.

AB - We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that UV to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.

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U2 - 10.1016/j.sna.2007.06.003

DO - 10.1016/j.sna.2007.06.003

M3 - Comment/debate

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SN - 0924-4247

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EP - 229

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

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ER -

ZnO-based MIS photodetectors (DOI:10.1016/j.sna.2007.06.006)

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