We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that UV to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.
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