TY - JOUR
T1 - ZnO-based resonant cavity enhanced metal-semiconductor-metal ultraviolet photodetectors
AU - Lee, Hsin Ying
AU - Hsu, Yu Ting
AU - Lee, Ching Ting
N1 - Funding Information:
This work was supported by the Advanced Optoelectronic Technology Center of the National Cheng Kung University, and the National Science Council of Taiwan under Contract No. NSC-99-2221-E-006-208-MY3.
Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2013/1
Y1 - 2013/1
N2 - Employing the vapor cooling condensation system and the distributed Bragg reflectors (DBRs), an intrinsic zinc-oxide (i-ZnO) film and Fabry-Perot cavity were deposited and used as the structure of the ZnO-based resonant cavity enhanced metal-semiconductor-metal ultraviolet photodetectors (RCE MSM UV PDs). The reflection of the DBRs with 18.5 and 2.5 HfO2/SiO2 pairs at a wavelength of 305 nm was 98.9% and 33.7%, respectively. Owing to the RCE structure, the 50 nm-thick ZnO-based RCE MSM UV PDs exhibited a UV-visible ratio of 265, a photoresponsivity of 0.268 A/W, and a detectivity of 1.19 × 1010 cm Hz0.5 W-1 at a wavelength of 305 nm.
AB - Employing the vapor cooling condensation system and the distributed Bragg reflectors (DBRs), an intrinsic zinc-oxide (i-ZnO) film and Fabry-Perot cavity were deposited and used as the structure of the ZnO-based resonant cavity enhanced metal-semiconductor-metal ultraviolet photodetectors (RCE MSM UV PDs). The reflection of the DBRs with 18.5 and 2.5 HfO2/SiO2 pairs at a wavelength of 305 nm was 98.9% and 33.7%, respectively. Owing to the RCE structure, the 50 nm-thick ZnO-based RCE MSM UV PDs exhibited a UV-visible ratio of 265, a photoresponsivity of 0.268 A/W, and a detectivity of 1.19 × 1010 cm Hz0.5 W-1 at a wavelength of 305 nm.
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U2 - 10.1016/j.sse.2012.07.008
DO - 10.1016/j.sse.2012.07.008
M3 - Article
AN - SCOPUS:84869506750
SN - 0038-1101
VL - 79
SP - 223
EP - 226
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -