ZnO-Based Solar Blind Ultraviolet-B Photodetectors Using MgZnO Absorption Layer

Ching Ting Lee, Tzu Shun Lin, Chia Hsun Chen

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The heterostructured thin films of the solar blind p-ZnO:LiNO3/i-MgZnO/n-MgZnO:In ultraviolet-B photodetectors were deposited at a low temperature using the vapor cooling condensation system. The photodetectors exhibited an absorption cut-off wavelength of 310 nm and did not response in the visible wavelength range. A low dark current of 20 pA and a high rejection ratio of 3.60 × 103 were measured when a reverse bias voltage of −1 V was applied. The associated photoresponsivity of 0.2 A/W, the noise equivalent power of 9.50 × 10−12 W and the specific detectivity of 3.16 × 1012 cm Hz1/2 W−1 were obtained. Furthermore, the dominant noise originated from the flicker noise.

原文English
頁(從 - 到)4722-4725
頁數4
期刊Journal of Electronic Materials
44
發行號12
DOIs
出版狀態Published - 2015 十月 8

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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