ZnO-Based Solar Blind Ultraviolet-C Photodetectors Using SiZnO Absorption Layer

Ching Ting Lee, Tzu Shun Lin

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The p-ZnO:LiNO3/i-SiZnO/n-ZnO:In (p-i-n) ZnO-based solar blind ultraviolet-C photodetectors were deposited by vapor cooling condensation system. In view of the high performances of the deposited ZnO-based films, the solar blind performance was resulted due to very low photoresponse in the visible (VIS) wavelength range. The ultraviolet (270 nm)/VIS (420 nm) rejection ratio of $1.01 × 104 was obtained. The dominant noise was flicker noise. Furthermore, the photoresponsivity of 0.260 A/W, the noise equivalent power of 3.54 × 10-12 W, and the specific detectivity of 2.67 × 1011 cmHz1/2/W were obtained, when the photodetectors operated at a reverse bias voltage of -5 V.

原文English
文章編號7029053
頁(從 - 到)864-866
頁數3
期刊IEEE Photonics Technology Letters
27
發行號8
DOIs
出版狀態Published - 2015 四月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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