ZnO nanorod/p-GaN heterostructured light-emitting diodes passivated using photoelectrochemical method

Jheng Tai Yan, Ching Ting Lee

研究成果: Conference contribution

摘要

To fabricate the p-GaN/i-ZnO nanorod/n-ZnO nanorod (p-i-n) nanorod-heterosturctured light-emitting diodes (LEDs), i-ZnO and n-ZnO:In nanorod arrays were grown sequentially on a p-GaN layer. In order to passivate the non-radiatvie recombination centers at the nanorod sidewall, a thin Zn(OH)2 layer was directly grown on the ZnO nanorod using a photoelectrochemical method. Electroluminescence emission at 386 nm was observed from the resultant LEDs. Furthermore, the light output intensity of the passivated nanorod-heterosturctured LEDs was much larger than that of the unpassivated nanorod-heterosturctured LEDs. The result demonstrated that Zn(OH)2 directly grown on the ZnO nanorod sidewall could passivate the non-radiative recombination centers effectively.

原文English
主出版物標題Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
頁面71-77
頁數7
28
版本4
DOIs
出版狀態Published - 2010
事件Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada
持續時間: 2010 四月 252010 四月 30

Other

OtherWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
國家/地區Canada
城市Vancouver, BC
期間10-04-2510-04-30

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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