ZnO-nanowire-based extended-gate field-effect-transistor pH sensors prepared on glass substrate

Sheng Po Chang; Chih Wei Li; Kuan Jen Chen; Shoou Jinn Chang; Cheng Liang Hsu; Ting Jen Hsueh; Han Ting Hsueh

doi:10.1166/sam.2012.1410

ZnO-nanowire-based extended-gate field-effect-transistor pH sensors prepared on glass substrate

Sheng Po Chang, Chih Wei Li, Kuan Jen Chen, Shoou Jinn Chang, Cheng Liang Hsu, Ting Jen Hsueh, Han Ting Hsueh

研究成果: Article › 同行評審

28 引文斯高帕斯（Scopus）

摘要

The sensing membrane of a extended-gate field-effect-transistor (EGFET) pH sensor, consisting of a zinc oxide (ZnO) thin film and a ZnO nanowire array, was fabricated using the Vapor-liquid-solid method. The EGFET pH sensor with ZnO nanowire array exhibited significantly improved sensing performance owing to a large sensing surface-to-volume ratio. The measured current and voltage sensitivities of the pH sensor were 48.6 μA/pH and 36.9 mV/pH, respectively, at pH values ranging from 4 to 10.

原文	English
頁（從 - 到）	1174-1178
頁數	5
期刊	Science of Advanced Materials
卷	4
發行號	11
DOIs	https://doi.org/10.1166/sam.2012.1410
出版狀態	Published - 2012 11月

All Science Journal Classification (ASJC) codes

一般材料科學

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10.1166/sam.2012.1410

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abstract = "The sensing membrane of a extended-gate field-effect-transistor (EGFET) pH sensor, consisting of a zinc oxide (ZnO) thin film and a ZnO nanowire array, was fabricated using the Vapor-liquid-solid method. The EGFET pH sensor with ZnO nanowire array exhibited significantly improved sensing performance owing to a large sensing surface-to-volume ratio. The measured current and voltage sensitivities of the pH sensor were 48.6 μA/pH and 36.9 mV/pH, respectively, at pH values ranging from 4 to 10.",

author = "Chang, {Sheng Po} and Li, {Chih Wei} and Chen, {Kuan Jen} and Chang, {Shoou Jinn} and Hsu, {Cheng Liang} and Hsueh, {Ting Jen} and Hsueh, {Han Ting}",

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AU - Chang, Sheng Po

AU - Li, Chih Wei

AU - Chen, Kuan Jen

AU - Chang, Shoou Jinn

AU - Hsu, Cheng Liang

AU - Hsueh, Ting Jen

AU - Hsueh, Han Ting

PY - 2012/11

Y1 - 2012/11

N2 - The sensing membrane of a extended-gate field-effect-transistor (EGFET) pH sensor, consisting of a zinc oxide (ZnO) thin film and a ZnO nanowire array, was fabricated using the Vapor-liquid-solid method. The EGFET pH sensor with ZnO nanowire array exhibited significantly improved sensing performance owing to a large sensing surface-to-volume ratio. The measured current and voltage sensitivities of the pH sensor were 48.6 μA/pH and 36.9 mV/pH, respectively, at pH values ranging from 4 to 10.

AB - The sensing membrane of a extended-gate field-effect-transistor (EGFET) pH sensor, consisting of a zinc oxide (ZnO) thin film and a ZnO nanowire array, was fabricated using the Vapor-liquid-solid method. The EGFET pH sensor with ZnO nanowire array exhibited significantly improved sensing performance owing to a large sensing surface-to-volume ratio. The measured current and voltage sensitivities of the pH sensor were 48.6 μA/pH and 36.9 mV/pH, respectively, at pH values ranging from 4 to 10.

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JO - Science of Advanced Materials

JF - Science of Advanced Materials

IS - 11

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ZnO-nanowire-based extended-gate field-effect-transistor pH sensors prepared on glass substrate

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