ZnO-nanowire-based extended-gate field-effect-transistor pH sensors prepared on glass substrate

Sheng Po Chang, Chih Wei Li, Kuan Jen Chen, Shoou Jinn Chang, Cheng Liang Hsu, Ting Jen Hsueh, Han Ting Hsueh

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The sensing membrane of a extended-gate field-effect-transistor (EGFET) pH sensor, consisting of a zinc oxide (ZnO) thin film and a ZnO nanowire array, was fabricated using the Vapor-liquid-solid method. The EGFET pH sensor with ZnO nanowire array exhibited significantly improved sensing performance owing to a large sensing surface-to-volume ratio. The measured current and voltage sensitivities of the pH sensor were 48.6 μA/pH and 36.9 mV/pH, respectively, at pH values ranging from 4 to 10.

原文English
頁(從 - 到)1174-1178
頁數5
期刊Science of Advanced Materials
4
發行號11
DOIs
出版狀態Published - 2012 十一月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

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