TY - GEN
T1 - ZnO nanowire-based oxygen gas sensor
AU - Lu, C. Y.
AU - Chang, S. P.
AU - Chang, S. J.
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - We report growth of vertically well-aligned ZnO nanowires on ZnO:Ga/glass templates and the fabrication of resistive ZnO nanowire-based oxygen gas sensor. It was found that the ZnO nanowires are grown preferred oriented in the (002) direction with a small x-ray diffraction full-width-half-maximum. From high resolution transmission electron microscopy, scanning electron microscopy and micro-Raman measurements, it was found that the ZnO nanowires prepared in this study are single crystalline with good crystal quality. It was also found that measured sample resistance increased logarithmically as the oxygen gas pressure in the chamber was increased. Such a relationship suggests that the device is potentially useful for resistive oxygen gas sensing at room temperature.
AB - We report growth of vertically well-aligned ZnO nanowires on ZnO:Ga/glass templates and the fabrication of resistive ZnO nanowire-based oxygen gas sensor. It was found that the ZnO nanowires are grown preferred oriented in the (002) direction with a small x-ray diffraction full-width-half-maximum. From high resolution transmission electron microscopy, scanning electron microscopy and micro-Raman measurements, it was found that the ZnO nanowires prepared in this study are single crystalline with good crystal quality. It was also found that measured sample resistance increased logarithmically as the oxygen gas pressure in the chamber was increased. Such a relationship suggests that the device is potentially useful for resistive oxygen gas sensing at room temperature.
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U2 - 10.1109/EDSSC.2008.4760698
DO - 10.1109/EDSSC.2008.4760698
M3 - Conference contribution
AN - SCOPUS:63549126924
SN - 9781424425402
T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 8 December 2008 through 10 December 2008
ER -