ZnO photoconductive sensors epitaxially grown on sapphire substrates

S. P. Chang, Shoou-Jinn Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Yu-Cheng Lin, C. F. Kuo, H. M. Chang

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of ZnO photoconductive sensors epitaxially grown on sapphire substrates with interdigitated Ni/Au electrodes. It was found that there exists an electric field-dependent photoconductive gain in the fabricated sensors. With an applied electric field of 500 V/cm, it was found that maximum quantum efficiency was around 2.8% while time constant of the decay transient was τ ∼ 0.556 ms.

原文English
頁(從 - 到)60-64
頁數5
期刊Sensors and Actuators, A: Physical
140
發行號1
DOIs
出版狀態Published - 2007 十月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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